FGB7N60UNDF
- Mfr.Part #
- FGB7N60UNDF
- Manufacturer
- Rochester Electronics
- Package/Case
- -
- Datasheet
- Download
- Description
- INSULATED GATE BIPOLAR TRANSISTO
- Manufacturer :
- Rochester Electronics
- Product Category :
- Transistors - IGBTs - Single
- Current - Collector (Ic) (Max) :
- 14 A
- Current - Collector Pulsed (Icm) :
- 21 A
- Gate Charge :
- 18 nC
- IGBT Type :
- NPT
- Input Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Part Status :
- Active
- Power - Max :
- 83 W
- Reverse Recovery Time (trr) :
- 32.3 ns
- Supplier Device Package :
- D2PAK (TO-263)
- Switching Energy :
- 99µJ (on), 104µJ (off)
- Td (on/off) @ 25°C :
- 5.9ns/32.3ns
- Test Condition :
- 400V, 7A, 10Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.3V @ 15V, 7A
- Voltage - Collector Emitter Breakdown (Max) :
- 600 V
- Datasheets
- FGB7N60UNDF
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Part | Manufacturer | Stock | Description |
---|---|---|---|
FGB7N60UNDF | onsemi | 1,000 | IGBT NPT 600V 14A D2PAK |