FGB7N60UNDF

Mfr.Part #
FGB7N60UNDF
Manufacturer
Rochester Electronics
Package/Case
-
Datasheet
Download
Description
INSULATED GATE BIPOLAR TRANSISTO
Manufacturer :
Rochester Electronics
Product Category :
Transistors - IGBTs - Single
Current - Collector (Ic) (Max) :
14 A
Current - Collector Pulsed (Icm) :
21 A
Gate Charge :
18 nC
IGBT Type :
NPT
Input Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Part Status :
Active
Power - Max :
83 W
Reverse Recovery Time (trr) :
32.3 ns
Supplier Device Package :
D2PAK (TO-263)
Switching Energy :
99µJ (on), 104µJ (off)
Td (on/off) @ 25°C :
5.9ns/32.3ns
Test Condition :
400V, 7A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic :
2.3V @ 15V, 7A
Voltage - Collector Emitter Breakdown (Max) :
600 V
Datasheets
FGB7N60UNDF

Manufacturer related products

Catalog related products

Related products

Part Manufacturer Stock Description
FGB7N60UNDF onsemi 1,000 IGBT NPT 600V 14A D2PAK