GA04JT17-247

Manufacturer :

GeneSiC Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4A (Tc) (95°C)

Drain to Source Voltage (Vdss) :

1700 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

-

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Through Hole

Operating Temperature :

175°C (TJ)

Package / Case :

TO-247-3

Part Status :

Obsolete

Power Dissipation (Max) :

106W (Tc)

Rds On (Max) @ Id, Vgs :

480mOhm @ 4A

Supplier Device Package :

TO-247AB

Technology :

SiC (Silicon Carbide Junction Transistor)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

-