RSY200N05TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

20A (Ta)

Drain to Source Voltage (Vdss) :

45 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

3-SMD, Flat Leads

Part Status :

Active

Power Dissipation (Max) :

20W (Ta)

Rds On (Max) @ Id, Vgs :

-

Supplier Device Package :

TCPT3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

-