2SJ621-T1B-AT

Mfr.Part #
2SJ621-T1B-AT
Manufacturer
Renesas Electronics Corporation
Package/Case
-
Datasheet
Download
Description
MOSFET P-CH 12V SC-96 SOT-23
Manufacturer :
Renesas Electronics Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
3.5A (Ta)
Drain to Source Voltage (Vdss) :
12 V
Drive Voltage (Max Rds On, Min Rds On) :
-
FET Feature :
-
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
6.2 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds :
630 pF @ 10 V
Mounting Type :
Surface Mount
Operating Temperature :
-
Package / Case :
SC-96
Part Status :
Last Time Buy
Power Dissipation (Max) :
-
Rds On (Max) @ Id, Vgs :
44mOhm @ 2A, 4.5V
Supplier Device Package :
SC-96-3, Thin Mini Mold
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
-
Vgs(th) (Max) @ Id :
1.5V @ 1mA
Datasheets
2SJ621-T1B-AT

Manufacturer related products

Catalog related products

Related products

Part Manufacturer Stock Description
2SJ600-Z-E1-AZ Renesas Electronics Corporation 1,000 TRANSISTOR
2SJ601(0)-Z-E1-AZ Renesas Electronics Corporation 1,000 TRANSISTOR
2SJ601-ZK-E1-AZ Renesas Electronics Corporation 2,500 MP-3ZK
2SJ602-Z-AZ Rochester Electronics 1,000 P-CHANNEL POWER MOSFET
2SJ605-ZJ-E1-AZ Rochester Electronics 652 P-CHANNEL POWER MOSFET
2SJ606-Z-AZ Rochester Electronics 297 P-CHANNEL SWITCHING POWER MOSFET
2SJ606-ZK-E1-AY Rochester Electronics 800 P-CHANNEL SWITCHING POWER MOSFET
2SJ609 Rochester Electronics 7,400 P-CHANNEL SMALL SIGNAL MOSFET
2SJ610(TE16L1,NQ) Toshiba Electronic Devices and Storage Corporation 1,000 MOSFET P-CH 250V 2A PW-MOLD
2SJ612-TD-E Rochester Electronics 1,000 P-CHANNEL SILICON MOSFET
2SJ615-TD-E Rochester Electronics 73,000 PCH 4V DRIVE SERIES
2SJ616-TD-E Rochester Electronics 78,365 2SJ616 - P CHANNEL MOSFET
2SJ624-T1B-AT Renesas Electronics Corporation 1,000 MOSFET P-CH 20V SC-96 SOT-23
2SJ630-TD-E Rochester Electronics 1,000 P-CHANNEL SILICON MOSFET
2SJ632-M-TD-E Rochester Electronics 47,000 2SJ632 - P-CHANNEL SILICON MOSFE