2SJ542-E

Manufacturer :

Rochester Electronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

18A (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

1300 pF @ 10 V

Mounting Type :

Through Hole

Operating Temperature :

150°C

Package / Case :

TO-220-3

Part Status :

Active

Power Dissipation (Max) :

60W (Tc)

Rds On (Max) @ Id, Vgs :

65mOhm @ 9A, 10V

Supplier Device Package :

TO-220AB

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 1mA