FDS6990S

Mfr.Part #
FDS6990S
Manufacturer
Rochester Electronics
Package/Case
-
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Manufacturer :
Rochester Electronics
Product Category :
Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
7.5A (Ta)
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Standard
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
16nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
1233pF @ 15V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Part Status :
Active
Power - Max :
900mW (Ta)
Rds On (Max) @ Id, Vgs :
22mOhm @ 7.5A, 10V
Supplier Device Package :
8-SOIC
Vgs(th) (Max) @ Id :
3V @ 1mA
Datasheets
FDS6990S

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