GES5816

Manufacturer :

Rochester Electronics

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

750 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2mA, 2V

Frequency - Transition :

120MHz

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 135°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Part Status :

Active

Power - Max :

500 mW

Supplier Device Package :

TO-92

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

40 V