| 2SB906-Y(TE16L1,NQ |
Toshiba Electronic Devices and Storage Corporation |
1,000 |
TRANS PNP 60V 3A PW-MOLD |
| 2SB926S |
Rochester Electronics |
4,350 |
SMALL SIGNAL BIPOLAR TRANSISTOR |
| 2SB926S-AA |
Rochester Electronics |
60,000 |
SMALL SIGNAL BIPOLAR TRANSISTOR |
| 2SB926T |
Rochester Electronics |
1,000 |
PNP EPITAXIAL PLANAR SILICON |
| 2SB927S-AE |
Rochester Electronics |
13,000 |
TRANSISTOR |
| 2SB927T-AE |
Rochester Electronics |
8,000 |
PNP SILICON TRANSISTOR |
| 2SB927T-AE |
Rochester Electronics |
8,000 |
2SB927 - PNP EPITAXIAL PLANAR SI |
| 2SB955K |
Rochester Electronics |
3,326 |
POWER BIPOLAR TRANSISTOR, PNP |
| 2SB955K-E |
Rochester Electronics |
1,750 |
POWER BIPOLAR TRANSISTOR, PNP |
| 2SB985T-AE |
Rochester Electronics |
42,000 |
PNP EPITAXIAL PLANAR SILICON |
| 2SB986T |
Rochester Electronics |
12,143 |
POWER BIPOLAR TRANSISTOR, PNP |
