NJX1675PDR2G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current - Collector (Ic) (Max) :

3A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 1A, 2V

Frequency - Transition :

100MHz, 120MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Part Status :

Obsolete

Power - Max :

2W

Supplier Device Package :

8-SOIC

Transistor Type :

NPN, PNP

Vce Saturation (Max) @ Ib, Ic :

115mV @ 200mA, 2A, 170mV @ 200mA, 2A

Voltage - Collector Emitter Breakdown (Max) :

30V