HS1JL M2G

Mfr.Part #
HS1JL M2G
Manufacturer
Taiwan Semiconductor
Package/Case
-
Datasheet
Download
Description
DIODE GEN PURP 600V 1A SUB SMA
Manufacturer :
Taiwan Semiconductor
Product Category :
Diodes - Rectifiers - Single
Capacitance @ Vr, F :
15pF @ 4V, 1MHz
Current - Average Rectified (Io) :
1A
Current - Reverse Leakage @ Vr :
5 µA @ 600 V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
DO-219AB
Part Status :
Active
Reverse Recovery Time (trr) :
75 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
Sub SMA
Voltage - DC Reverse (Vr) (Max) :
600 V
Voltage - Forward (Vf) (Max) @ If :
1.7 V @ 1 A
Datasheets
HS1JL M2G

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