HS2JAL M3G

Mfr.Part #
HS2JAL M3G
Manufacturer
Taiwan Semiconductor
Package/Case
-
Datasheet
Download
Description
75NS, 2A, 600V, HIGH EFFICIENT R
Manufacturer :
Taiwan Semiconductor
Product Category :
Diodes - Rectifiers - Single
Capacitance @ Vr, F :
17pF @ 4V, 1MHz
Current - Average Rectified (Io) :
2A
Current - Reverse Leakage @ Vr :
1 µA @ 600 V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
DO-221AC, SMA Flat Leads
Part Status :
Active
Reverse Recovery Time (trr) :
75 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
Thin SMA
Voltage - DC Reverse (Vr) (Max) :
600 V
Voltage - Forward (Vf) (Max) @ If :
1.7 V @ 2 A
Datasheets
HS2JAL M3G

Manufacturer related products

  • Taiwan Semiconductor
    TVS DIODE 36VWM 58.1VC SMC
  • Taiwan Semiconductor
    TVS DIODE 33VWM 53.3VC SMC
  • Taiwan Semiconductor
    TVS DIODE 54VWM 87.1VC SMC
  • Taiwan Semiconductor
    TVS DIODE 26VWM 42.1VC SMC
  • Taiwan Semiconductor
    TVS DIODE 12VWM 19.9VC SMC

Catalog related products

Related products

Part Manufacturer Stock Description
HS2J M4G Taiwan Semiconductor 1,000 DIODE GEN PURP 600V 2A DO214AA
HS2J R5G Taiwan Semiconductor 1,000 DIODE GEN PURP 600V 2A DO214AA
HS2J-F1-0000HF YANGJIE 2,990 DIODE GEN PURP 600V 2A DO214AA
HS2JA M2G Taiwan Semiconductor 1,000 DIODE GEN PURP 600V 1.5A DO214AC
HS2JA R3G Taiwan Semiconductor 3,380 DIODE GEN PURP 600V 1.5A DO214AC
HS2JFS M3G Taiwan Semiconductor 6,957 75NS, 2A, 600V, HIGH EFFICIENT R